Article 6320

Title of the article

TECHNOLOGIES FOR HETEROSTRUCTURES FORMATION OF TRANSDUCER 

Authors

Mikhaylov Petr Grigor'evich, Doctor of engineering sciences, professor, general director, Research and production center “Control measuring technologies” (23 Kustodiyeva street, Penza, Russia), E-mail: pit_mix@mail.ru
Smogunov Vladimir Vasil'evich, Doctor of engineering sciences, professor, sub-department of theoretical and applied mechanics and graphics, Penza State University (40 Krasnaya treet, Penza, Russia), E-mail: pnzgu.tpmg@mail.ru
Vol'nikov Mikhail Ivanovich, Candidate of engineering sciences, associate professor, sub-department of automation and control, Penza State Technological University (1a/11 Baydukova lane/Gagarina street, Penza, Russia), E-mail: vmi1972@yandex.ru 

Index UDK

537.331.33 

DOI

10.21685/2072-3059-2020-3-6 

Abstract

Background. The relevance of the work is due to the high heterogeneity of the elements and structures of modern microelectronic converters of physical quantities, designed to operate in a wide range of temperatures and radiation. The goal of the research is development of technologies for the formation of heterogeneous elements and structures of high-temperature transducers.
Materials and methods. Heterology, solid state physics and microsystem technology are used as methods and research tools.
Results. Heterology of the technology for the formation of semiconductor 3D structures based on doped polycrystalline silicon has been developed.
Conclusion. Based on the analysis of experimental results of the formation of piezoresistors made of polycrystalline silicon, factors affecting the electrophysical characteristics of sensor elements are determined. 

Key words

heterology, technology, silicon, polysilicon, structure, heterogeneity, transducer, sensitive element, high temperature, microelectronic 

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References

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Дата создания: 03.12.2020 13:21
Дата обновления: 03.12.2020 15:10